Defect criticality index (DCI): a new methodology to significantly improve DOI sampling rate in a 45nm production environment

Yoshiyuki Sato; Yasuyuki Yamada; Yasuhiro Kaga; Yuuichiro Yamazaki; Masami Aoki; David Tsui; Chris Young; Ellis Chang

doi:10.1117/12.771917

16 April 2008 Defect criticality index (DCI): a new methodology to significantly improve DOI sampling rate in a 45nm production environment

Yoshiyuki Sato, Yasuyuki Yamada, Yasuhiro Kaga, Yuuichiro Yamazaki, Masami Aoki, David Tsui, Chris Young, Ellis Chang

Author Affiliations +

Proceedings Volume 6922, Metrology, Inspection, and Process Control for Microlithography XXII; 692213 (2008) https://doi.org/10.1117/12.771917
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

Increasing inspection sensitivity may be necessary for capturing the smaller defects of interest (DOI) dictated by reduced minimum design features. Unfortunately, higher inspection sensitivity can result in a greater percentage of non-DOI or nuisance defect types during inline monitoring in a mass production environment. Due to the time and effort required, review sampling is usually limited to 50 to 100 defects per wafer. Determining how to select and identify critical defect types under very low sampling rate conditions, so that more yield-relevant defect Paretos can be created after SEM review, has become very important. By associating GDS clip (design layout) information with every defect, and including defect attributes such as size and brightness, a new methodology called Defect Criticality Index (DCI) has demonstrated improved DOI sampling rates.

Citation Download Citation

Yoshiyuki Sato, Yasuyuki Yamada, Yasuhiro Kaga, Yuuichiro Yamazaki, Masami Aoki, David Tsui, Chris Young, and Ellis Chang "Defect criticality index (DCI): a new methodology to significantly improve DOI sampling rate in a 45nm production environment", Proc. SPIE 6922, Metrology, Inspection, and Process Control for Microlithography XXII, 692213 (16 April 2008); https://doi.org/10.1117/12.771917

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