AWV: high-throughput cross-array cross-wafer variation mapping

Jeong-Ho Yeo; Byoung-Ho Lee; Tae-Yong Lee; Gadi Greenberg; Doron Meshulach; Erez Ravid; Shimon Levi; Kobi Kan; Saar Shabtay; Yehuda Cohen; Ofer Rotlevi

doi:10.1117/12.772402

16 April 2008 AWV: high-throughput cross-array cross-wafer variation mapping

Jeong-Ho Yeo, Byoung-Ho Lee, Tae-Yong Lee, Gadi Greenberg, Doron Meshulach, Erez Ravid, Shimon Levi, Kobi Kan, Saar Shabtay, Yehuda Cohen, Ofer Rotlevi

Author Affiliations +

Proceedings Volume 6922, Metrology, Inspection, and Process Control for Microlithography XXII; 69221S (2008) https://doi.org/10.1117/12.772402
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

Minute variations in advanced VLSI manufacturing processes are well known to significantly impact device performance and die yield. These variations drive the need for increased measurement sampling with a minimal impact on Fab productivity. Traditional discrete measurements such as CDSEM or OCD, provide, statistical information for process control and monitoring. Typically these measurements require a relatively long time and cover only a fraction of the wafer area. Across array across wafer variation mapping ( AWV) suggests a new approach for high throughput, full wafer process variation monitoring, using a DUV bright-field inspection tool. With this technique we present a full wafer scanning, visualizing the variation trends within a single die and across the wafer. The underlying principle of the AWV inspection method is to measure variations in the reflected light from periodic structures, under optimized illumination and collection conditions. Structural changes in the periodic array induce variations in the reflected light. This information is collected and analyzed in real time. In this paper we present AWV concept, measurements and simulation results. Experiments were performed using a DUV bright-field inspection tool (UVision^(TM), Applied Materials) on a memory short loop experiment (SLE), Focus Exposure Matrix (FEM) and normal wafers. AWV and CDSEM results are presented to reflect CD variations within a memory array and across wafers.

Citation Download Citation

Jeong-Ho Yeo, Byoung-Ho Lee, Tae-Yong Lee, Gadi Greenberg, Doron Meshulach, Erez Ravid, Shimon Levi, Kobi Kan, Saar Shabtay, Yehuda Cohen, and Ofer Rotlevi "AWV: high-throughput cross-array cross-wafer variation mapping", Proc. SPIE 6922, Metrology, Inspection, and Process Control for Microlithography XXII, 69221S (16 April 2008); https://doi.org/10.1117/12.772402

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available