25 March 2008 22 nm node contact hole formation in extreme ultra-violet lithography
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Proceedings Volume 6922, Metrology, Inspection, and Process Control for Microlithography XXII; 69223X (2008); doi: 10.1117/12.780242
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States
Abstract
Patterning of contact hole is always the most difficult process among many types of pattern formations. Specially for the Extreme Ultra-Violet Lithography (EUVL), it will be even more difficult to make perfectly circled contact hole due to the shadow effect. The shape of contact hole will be elliptical because the vertical axis opening is different from the horizontal axis opening. We studied this behavior for 22 nm node contact hole patterns. We varied the pitch of the regular contact hole array. The dependency of the position and density is studied for the random array. In addition to that the thickness of the absorber and the reflectivity of the multilayer are varied to see non-circular contact hole. In order to make desired circular contact hole with uniform width, direction dependent mask bias is applied in addition to the normal optical proximity correction.
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Eun-Jin Kim, Kwan-Hyung Kim, Hyeong-Ryeol Park, Jun-Yeob Yeo, Jai-Soon Kim, Hye-Keun Oh, "22 nm node contact hole formation in extreme ultra-violet lithography", Proc. SPIE 6922, Metrology, Inspection, and Process Control for Microlithography XXII, 69223X (25 March 2008); doi: 10.1117/12.780242; https://doi.org/10.1117/12.780242
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KEYWORDS
Optical lithography

Extreme ultraviolet lithography

Photomasks

Lithography

Ultraviolet radiation

Image processing

Extreme ultraviolet

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