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31 March 2008 Non-topcoat resist design for immersion process at 32-nm node
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Abstract
At the 32nm node, the most important issue for mass production in immersion lithography is defectivity control. Many methods have been studied to reduce post-exposure immersion defects. Although a topcoat process demonstrates good immersion defect prevention, a topcoat-less resist process is an attractive candidate for immersion lithography due to cost reduction from a simplified process. In this paper we took the innovative approach of chemically designing an internal self-assembling barrier material that creates a thin embedded layer which functions as a topcoat. Data will be presented on this novel self assembly concept, illustrating the control of leaching, contact angle and immersion defects. Several optimized process flows with non-topcoat resists were also studied to decrease the amount of immersion defects. This study was used to verify the capability of a topcoat-less immersion process to achieve the low-defectivity levels required for 32nm node production.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Steven Wu, Aroma Tseng, Bill Lin, Chun Chi Yu, Bo-Jou Lu, Wen-Shiang Liao, Deyan Wang, Vaishali Vohra, Cheng Bai Xu, Stefan Caporale, and George Barclay "Non-topcoat resist design for immersion process at 32-nm node", Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 692307 (31 March 2008); https://doi.org/10.1117/12.775542
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