26 March 2008 Resist freezing process for double exposure lithography
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Abstract
In this study, we have developed a thermal freezing process to prevent intermixing between 1st patterned positive resist and 2nd positive resist. Based on solvent solubility switch characteristic of polymer after higher temperature bake, a prototype of polymer consisting of methyladmantane mathacrylate, norbornanecarbo lactone mathacrylate and hydroxyl admantane mathacrylate was selected for resist-on-resist double exposure experiment to prevent the intermixing between layers. Photo sensitivity shifting of this prototype resist after post develop bake further facilitates the design by preventing 1st layer resist distortion from 2nd exposure. Lastly, through composition and formulation optimization, 35nm L/S patterns were successfully demonstrated by using a 1.2NA stepper.
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Kuang-Jung Rex Chen, Kuang-Jung Rex Chen, Wu-Song Huang, Wu-Song Huang, Wai-Kin Li, Wai-Kin Li, P. Rao Varanasi, P. Rao Varanasi, } "Resist freezing process for double exposure lithography", Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69230G (26 March 2008); doi: 10.1117/12.772852; https://doi.org/10.1117/12.772852
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