26 March 2008 Chemically amplified molecular resist based on fullerene derivative for nanolithography
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We developed a chemically amplified molecular resist based on a fullerene derivative and evaluated the lithographic performance using 75 keV electron beam (EB) exposure tool to explore the potential of fullerene derivatives as a positive-type EB resist with high resolution and high sensitivity properties. The etching rate of fullerene derivative is almost similar to that of ZEP and UVIII. Also, the fullerene derivative resist containing 6 wt% acid generator shows a sensitivity of 33 &mgr;C/cm2 when it was exposed to 75 keV electron beam and postbaked at 170 °C. Although it required a dose of 800 &mgr;C/cm2, a fullerene derivative film yielded line resolution of better than 30 nm. Moreover, the effect of the types of acid generators to the resist performance of fullerene derivatives was investigated. It is very important for a fullerene derivative resist to select appropriate acid generator and process conditions. Fullerene derivative resists are a promising candidate for nanolithography.
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Hiroki Yamamoto, Hiroki Yamamoto, Takahiro Kozawa, Takahiro Kozawa, Seiichi Tagawa, Seiichi Tagawa, Tomoyuki Ando, Tomoyuki Ando, Katsumi Ohmori, Katsumi Ohmori, Mitsuru Sato, Mitsuru Sato, Junichi Onodera, Junichi Onodera, "Chemically amplified molecular resist based on fullerene derivative for nanolithography", Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69230N (26 March 2008); doi: 10.1117/12.771835; https://doi.org/10.1117/12.771835

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