26 March 2008 New architectures for high resolution patterning
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Abstract
The ability of the semiconductor industry to reduce device dimensions below 45 nm is hindered by limitations in both resist material and processing techniques. High resolution and sensitivity along with low line edge roughness are key requirements of next generation resist materials. In order to meet future demands of the semiconductor industry, new resist design strategies are being considered. In the past few years, we have focused on developing small molecule resists capable of high resolution patterning. Despite their small size, these molecules known as molecular glasses can be designed to demonstrate high glass transition temperature (Tg) comparable to polymeric resists. Several ring and branched architectures with high Tg values that have attained feature resolution as small as 30nm through Extreme Ultraviolet (EUV) exposure will be discussed. In addition to potential performance advantages, the small size of these resist molecules also allows solvent free processing techniques to be utilized. Our efforts on physical vapor deposition and supercritical CO2 development of molecular glass resists will also be highlighted. Furthermore, we are also investigating hybrid resist materials by combining short polymeric arms with various molecular glass cores. These innovative architectures are being explored at 193nm wavelength through fundamental structure - property analysis.
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Anuja De Silva, Nelson Felix, Drew Forman, Jing Sha, and Christopher K. Ober "New architectures for high resolution patterning", Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69230O (26 March 2008); doi: 10.1117/12.772667; https://doi.org/10.1117/12.772667
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