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15 April 2008 Extraction and identification of resist modeling parameters for EUV lithography
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The objective of this work is to understand, from a simulation perspective, how current EUV resist chemistries compare to mature 193nm (ArF) photoresist systems. Accurate resist models for EUV resists may be developed using the same in-house calibration methodology used for ArF resists. Using this methodology, key resist properties, such as optical density, dissolution behavior, and imaging characteristics, are correlated to model parameters that have a significant impact on resist imaging performance. Such resist models, once calibrated, are used to make predictions of key lithographic metrics, such as MEF and process latitude. In this work, model calibration results for ArF and EUV resist systems are compared and the resulting resist models are used to contrast fundamental resist behavior at the ArF and EUV wavelengths.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Carlos A. Fonseca, Roel Gronheid, and Steven A. Scheer "Extraction and identification of resist modeling parameters for EUV lithography", Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69230T (15 April 2008);

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