15 April 2008 Etching spin-on trilayer masks
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Abstract
Spin-on trilayer materials are increasingly being integrated in high density microfabrication that use high NA ArF lithography due to dwindling photoresist film thicknesses, lower integration cost and reduced complexity compared to analogous CVD stacks. To guide our development in spin-on trilayer materials we have established etch conditions on an ISM etcher for pattern transfer through trilayer hard masks. We report here a range of etch process variables and their impact on after-etch profiles and etch selectivity with AZ trilayer hard mask materials. Trilayer pattern transfer is demonstrated using 1st and 2nd minimum stacks with various pattern types. Etch recipes are then applied to blanket coated wafers to make comparisons between etch selectivities derived from patterned and blanket coated wafers.
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David J. Abdallah, David J. Abdallah, Shinji Miyazaki, Shinji Miyazaki, Aritaka Hishida, Aritaka Hishida, Allen Timko, Allen Timko, Douglas McKenzie, Douglas McKenzie, Dalil Rahman, Dalil Rahman, WooKyu Kim, WooKyu Kim, Lyudmila Pylneva, Lyudmila Pylneva, Hengpeng Wu, Hengpeng Wu, Ruzhi Zhang, Ruzhi Zhang, Ping-Hung Lu, Ping-Hung Lu, Mark Neisser, Mark Neisser, Ralph Dammel, Ralph Dammel, } "Etching spin-on trilayer masks", Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69230U (15 April 2008); doi: 10.1117/12.772691; https://doi.org/10.1117/12.772691
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