Non-chemically amplified resists for 193 nm lithography

Isao Nishimura; William H. Heath; Kazuya Matsumoto; Wei-Lun Jen; Saul S. Lee; Colin Neikirk; Tsutomu Shimokawa; Koji Ito; Koichi Fujiwara; C. Grant Willson

doi:10.1117/12.772646

26 March 2008 Non-chemically amplified resists for 193 nm lithography

Isao Nishimura, William H. Heath, Kazuya Matsumoto, Wei-Lun Jen, Saul S. Lee, Colin Neikirk, Tsutomu Shimokawa, Koji Ito, Koichi Fujiwara, C. Grant Willson

Author Affiliations +

Proceedings Volume 6923, Advances in Resist Materials and Processing Technology XXV; 69231C (2008) https://doi.org/10.1117/12.772646
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

Acid diffusion during the post-exposure bake of chemically amplified resists (CARs) is a major contributing factor to line width roughness (LWR) and resolution limits at the 32 nm node and beyond. To overcome these limitations, non-CAR materials are becoming more attractive because acid diffusion is eliminated. We have therefore focused our effort on the synthesis of copolymers that have both a diacyldiazo side chain unit as well as a hexafluoroalcohol unit. This copolymer shows better contrast than that of copolymers containing lactone units due to their inhibition behavior. Furthermore, polymer blends containing hexafluoroalcohol groups show good 100 nm line and space patterning property for 193 nm lithography. This paper describes the design, synthesis, and characterization of these non-CARs, and thier improvement to photolithography.

Citation Download Citation

Isao Nishimura, William H. Heath, Kazuya Matsumoto, Wei-Lun Jen, Saul S. Lee, Colin Neikirk, Tsutomu Shimokawa, Koji Ito, Koichi Fujiwara, and C. Grant Willson "Non-chemically amplified resists for 193 nm lithography", Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69231C (26 March 2008); https://doi.org/10.1117/12.772646

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