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26 March 2008 Molecular resists for EUV and EB lithography
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Abstract
Extreme ultraviolet lithography at a wavelength of 13.5 nm has been prepared for next generation lithography for several years. Of primary concern in EUV lithography is line edge roughness as well as high sensitivity. In recent years, various types of resist, such as protected PHS resin resist and molecular resist, have been investigated. In order to reduce LER, we have studied novel molecular resists which are promising alternative to polymeric photoresists for use as imaging materials with improved resolution and line edge roughness. The work reported in this paper has focused on the development of a new class of chemically amplified molecular resists that are composed of a single molecule which contains all of the different functionalities desired in a chemically amplified resists. For the purpose of improvement of the resist performance, we have designed the resist material of a protected polyphenol derivative (protected Compound A). PAG moiety is bonded to Compound A to achieve uniform PAG density and to control the acid diffusion length in a resist film. We analyzed uniformity of PAG density in a resist film by using gradient shaving preparation and TOF-SIMS analysis. From the TOF-SIMS spectra, the ions intensities of the PAG moiety are almost constant from the surface to the bottom of the film. Therefore, we can conclude that PAG is distributed homogeneously. Under e-beam exposure, a 100nm thick film of the PAG bonded molecular resist resolved lines down to 100nm. We also discussed the new design for molecular resists, their synthesis and lithographic performance.
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Ichiki Takemoto, Nobuo Ando, Kunishige Edamatsu, Youngjoon Lee, Masayuki Takashima, and Hiroyuki Yokoyama "Molecular resists for EUV and EB lithography", Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69231N (26 March 2008); doi: 10.1117/12.771880; https://doi.org/10.1117/12.771880
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