15 April 2008 A lithographic and process assessment of photoresist stabilization for double-patterning using 172-nm photoresist curing
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Proceedings Volume 6923, Advances in Resist Materials and Processing Technology XXV; 692321 (2008); doi: 10.1117/12.774205
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States
Abstract
We have developed a unique resist stabilization process for double patterning that uses 172 nm UV curing to 'freeze' a first photoresist pattern prior to application and patterning of a second photoresist film. 172 nm cure offers many potential advantages over other resist stabilization processes, including improved pattern fidelity vs. other cure processes and track-based implementation scenarios that are relatively simple, compact, and inexpensive. Assessment of 172 nm double imaging process requirements and limitations indicates that pattern distortions in the 'frozen' first photoresist may arise during all 2nd patterning steps, including coating, exposure, and development. Careful optimization to maximize overall pattern fidelity is needed. Process optimization using a conventional 193 nm photoresist suggests that pattern freeze approaches based on resist cure are best suited to extremely regular structures due to line-end and other resist distortions. Nevertheless, the method allows cross-grid contact printing at lithographic k1 = 0.385.
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Nikolaos Bekiaris, Hiram Cervera, Junyan Dai, Ryoung-han Kim, Alden Acheta, Thomas Wallow, Jongwook Kye, Harry J. Levinson, Thomas Nowak, James Yu, "A lithographic and process assessment of photoresist stabilization for double-patterning using 172-nm photoresist curing", Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 692321 (15 April 2008); doi: 10.1117/12.774205; https://doi.org/10.1117/12.774205
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