Pattern reduction has created a great deal of interest in finding effective methods to reduce the feature sizes of
microelectronic and data-storage devices. These methods are divided between top-down approach such as
photolithography and bottom-up approach such as self-assembly. For below 32 nm node technology, top-down
approach has obstacles such as diffraction-limited resolution and high cost of ownership. Bottom-up approach has
obstacles such as the insufficient support of processes and mass production. As one of solutions, double patterning
technology (DPT) has been researched.
In this paper, DPT is analytically shown more dense patterns then single or double exposures. For the reduction of the
DPT complexity, a mask design method, which is the inverse lithography technology (ILT) based on pixels and the
lithography model, is described as an integrated computational lithography platform to handle the DPT. The ILT can use
the decomposition of design and optical proximity correction for below 32 nm half pitch pattern generation. A simple
example is performed for its verification.
Sang-Kon Kim, Sang-Kon Kim,
"Double patterning study with inverse lithography", Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 692323 (26 March 2008); doi: 10.1117/12.773223; https://doi.org/10.1117/12.773223