15 April 2008 Photons, electrons, and acid yields in EUV photoresists: a progress report
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Proceedings Volume 6923, Advances in Resist Materials and Processing Technology XXV; 692325 (2008); doi: 10.1117/12.773869
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States
Abstract
This paper describes our initial investigation into building a greater understanding of the complex mechanism occurring during extreme ultraviolet (EUV) exposure of resist materials. In particular, we are focusing on the number and energy of photoelectrons generated and available for reaction with photoacid generators (PAGs). We propose that this approach will best enable the industry to develop resists capable of meeting resolution, line width roughness (LWR), and sensitivity requirements.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert Brainard, Elsayed Hassanein, Juntao Li, Piyush Pathak, Brad Thiel, Franco Cerrina, Richard Moore, Miguel Rodriguez, Boris Yakshinskiy, Elena Loginova, Theodore Madey, Richard Matyi, Matt Malloy, Andrew Rudack, Patrick Naulleau, Andrea Wüest, Kim Dean, "Photons, electrons, and acid yields in EUV photoresists: a progress report", Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 692325 (15 April 2008); doi: 10.1117/12.773869; http://dx.doi.org/10.1117/12.773869
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KEYWORDS
Electrons

Photons

Quantum efficiency

Extreme ultraviolet

Polymers

Monte Carlo methods

Extreme ultraviolet lithography

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