15 April 2008 Photons, electrons, and acid yields in EUV photoresists: a progress report
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This paper describes our initial investigation into building a greater understanding of the complex mechanism occurring during extreme ultraviolet (EUV) exposure of resist materials. In particular, we are focusing on the number and energy of photoelectrons generated and available for reaction with photoacid generators (PAGs). We propose that this approach will best enable the industry to develop resists capable of meeting resolution, line width roughness (LWR), and sensitivity requirements.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert Brainard, Robert Brainard, Elsayed Hassanein, Elsayed Hassanein, Juntao Li, Juntao Li, Piyush Pathak, Piyush Pathak, Brad Thiel, Brad Thiel, Franco Cerrina, Franco Cerrina, Richard Moore, Richard Moore, Miguel Rodriguez, Miguel Rodriguez, Boris Yakshinskiy, Boris Yakshinskiy, Elena Loginova, Elena Loginova, Theodore Madey, Theodore Madey, Richard Matyi, Richard Matyi, Matt Malloy, Matt Malloy, Andrew Rudack, Andrew Rudack, Patrick Naulleau, Patrick Naulleau, Andrea Wüest, Andrea Wüest, Kim Dean, Kim Dean, "Photons, electrons, and acid yields in EUV photoresists: a progress report", Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 692325 (15 April 2008); doi: 10.1117/12.773869; https://doi.org/10.1117/12.773869


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