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3 April 2008 Characterization of the latent image to developed image in model EUV photoresists
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Current extreme ultraviolet (EUV) photoresist materials do not yet meet performance requirements on exposure-dose sensitivity, line-width roughness, and resolution. In order to quantify how these trade-offs are related to the materials properties of the resist and processing conditions, advanced measurements and fundamental studies are required that consider EUV-resist specific problems. In this paper, we focus on the correlations between the latent image and developed image in EUV exposed line/space features. The latent images of isolated lines produced by EUV lithography are characterized by atomic force microscopy through the change in topology caused by change in film thickness that occurs upon deprotection. The resulting latent-image deprotection gradient (DGL), based on line cross-sections, and latent-image line-width roughness (LWRL) provide metrics and insight into ways to optimize the lithographic process. The results from a model poly(hydroxystyrene-co-tert-butylacrylate) resist and a model calix[4]resorcinarene molecular glass type resist show the general applicability of the metric before development.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John T. Woodward, Kwang-Woo Choi, Vivek M. Prabhu, Shuhui Kang, Kristopher A. Lavery, Wen-li Wu, Michael Leeson, Anuja De Silva, Nelson M. Felix, and Christopher K Ober "Characterization of the latent image to developed image in model EUV photoresists", Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69232B (3 April 2008);

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