Study of de-protection reaction analysis system for EUV lithography

A. Sekiguchi; Y. Kono

doi:10.1117/12.773572

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26 March 2008 Study of de-protection reaction analysis system for EUV lithography

A. Sekiguchi, Y. Kono

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Proceedings Volume 6923, Advances in Resist Materials and Processing Technology XXV; 69232C (2008) https://doi.org/10.1117/12.773572
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

Against the backdrop of remarkable strides in recent EUVL research, EUV chemically amplified resists were discussed as a critical issue in last year's International EUVL Symposium. Important concerns involving resists include improvements in resolution and sensitivity and reductions in outgassing and roughness. One important factor in improving resolution and sensitivity is understanding the behavior of the de-protection reaction of a photoresist during EUV exposures. We examined a system to analyze de-protection reactions in an ultra-thin-film process suitable for the EUV resist process.

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A. Sekiguchi and Y. Kono "Study of de-protection reaction analysis system for EUV lithography", Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69232C (26 March 2008); https://doi.org/10.1117/12.773572

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