26 March 2008 Development of new BARC for immersion process using hyper NA
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Most semiconductor companies are using Bottom Anti-Reflective Coating (BARC) on their lithography process to reduce bottom reflectivity, which is cause of standing wave, pattern collapse, and bad pattern profile, and to improve lithographic performance. BARC has been diversified to adapt to the wavelength of exposure light and refractive indices of photoresists and substrates. Recently, many semiconductor companies introduce new process, such as immersion process and double patterning process, to get high resolution for next generation semiconductor and they are trying to apply these processes to their mass production. Among those process solutions, a strong candidate for high resolution is introduction of hyper NA(Numerical Aperture) exposure tool, using immersion process. There is one thing to solve for BARC material when immersion process is applied. It is reflectivity. As NA of exposure tool increases, reflectivity from a substrate also increases, simultaneously. We simulated the difference of reflectivity with increasing NA and we found a proper way how to control reflectivity on immersion process with refractive indices of BARC. We will report simulation data for immersion process and introduce our new developed BARC for hyper NA process in this paper.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hyo Jung Roh, Hyo Jung Roh, Man Ho Han, Man Ho Han, Sang Jeoung Kim, Sang Jeoung Kim, Hyun Jin Kim, Hyun Jin Kim, Jaehyun Kim, Jaehyun Kim, Keun Kyu Kong, Keun Kyu Kong, Ki Lyoung Lee, Ki Lyoung Lee, Sung Koo Lee, Sung Koo Lee, Dong Heok Park, Dong Heok Park, } "Development of new BARC for immersion process using hyper NA", Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69232T (26 March 2008); doi: 10.1117/12.776801; https://doi.org/10.1117/12.776801

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