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26 March 2008 Low out-gassing organic spin-on hardmask
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Abstract
Beyond 45nm node processes, ArF hyper-NA immersion lithography systems are an inevitable choice for obtaining smaller patterns. A hyper-NA, dual BARC system is proposed to achieve low reflectivity. However, the ability for the resist to ask as a mask is severely challenged because of the increased film thickness associated with a dual BARC system. In order to obtain enough etch selectivity to the substrate, multi-layer resist processes can be applied. General multi-layer resist processes uses silicon containing an inorganic spin-on hard mask and an organic spin-on hard mask with a high carbon content. One of the problems of organic spin-on hard masks is high out-gassing, which can cause defect issues in mass production. We have developed a new organic hard mask with low out-gassing, good reflectivity control (< 0.2%) and good etch durability. Gap-filling performance also can be controlled by changing its fluidity and wettability on the substrate.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shinya Minegishi, Nakaatsu Yoshimura, Mitsuo Sato, Yousuke Konno, Keiji Konno, Mark Slezak, Junichi Takahashi, Shigeru Abe, Yoshikazu Yamaguchi, and Tsutomu Shimokawa "Low out-gassing organic spin-on hardmask", Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69232X (26 March 2008); https://doi.org/10.1117/12.771621
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