15 April 2008 Reflection control for immersion lithography at 45/32-nm nodes
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Abstract
A new dual bottom antireflectant consisting of an organic antireflectant and a SixOyNz:H (SiON) layer has been designed for metal layers to cover both 45nm and 32nm node logic devices. Simulations have been used to optimize the optical constants of the organic antireflectant. The new antireflectant system has been evaluated on a 1.2NA tool for metal layers. The same organic antireflectant has been successfully applied to via layers at a different thickness. The overall patterning performance including profiles, line width roughness (LWR), overlap depth of focus margin (ODOF) and critical dimension (CD) uniformity before and after etch has been evaluated. The new antireflectant system meets all the patterning requirements for a manufacturable process. An immersion tool at 1.2NA was used to perform lithography tests. Simulation was performed by using ProlithTM software.
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Wan-Ju Tseng, Wan-Ju Tseng, Ruei-Hung Hsu, Ruei-Hung Hsu, Shu Huei Hou, Shu Huei Hou, Tzu-Huai Tseng, Tzu-Huai Tseng, Bill Lin, Bill Lin, Chun Chi Yu, Chun Chi Yu, Sue Ryeon Kim, Sue Ryeon Kim, Jeong Yun Yu, Jeong Yun Yu, Gerald Wayton, Gerald Wayton, Maurizio Ciambra, Maurizio Ciambra, Suzanne Coley, Suzanne Coley, David Praseuth, David Praseuth, Nick Pugliano, Nick Pugliano, } "Reflection control for immersion lithography at 45/32-nm nodes", Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69232Z (15 April 2008); doi: 10.1117/12.776671; https://doi.org/10.1117/12.776671
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