Fabrication of 32-nm contact/via hole by photolithographic-friendly method

Tetsu Kawasaki; Satoru Shimura; Fumiko Iwao; Eiichi Nishimura; Masato Kushibiki; Kazuhide Hasebe; Michael Carcasi; Mark Somervell; Steven Scheer; Hidetami Yaegashi

doi:10.1117/12.771907

26 March 2008 Fabrication of 32-nm contact/via hole by photolithographic-friendly method

Tetsu Kawasaki, Satoru Shimura, Fumiko Iwao, Eiichi Nishimura, Masato Kushibiki, Kazuhide Hasebe, Michael Carcasi, Mark Somervell, Steven Scheer, Hidetami Yaegashi

Author Affiliations +

Proceedings Volume 6923, Advances in Resist Materials and Processing Technology XXV; 692333 (2008) https://doi.org/10.1117/12.771907
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

As semiconductor design rules continue to shrink, studies have begun on the 32nm-node and 22nm-node generations in semiconductor lithography technology in conjunction with the development of various fine-processing technologies. Research has been especially active in the development of high-NA193nm immersion lithography and EUV lithography for 32nm processes and beyond, but at the present stage of development, many technical issues have been reported. For example, in the contact-hole and via-hole pattern formation process in 193nm immersion lithography, it is difficult to maintain good resolution performance and process margins compared to line and space patterns. Poor resolution and other defects in the lithography process are major factors behind reduced yields in semiconductor production lines, and to prevent such defects, studies have begun on double patterning technology and shrink technology applied after resist-hole-pattern formation. Here, however, the need for reducing production processes and production costs have become major issues. In response to these technical issues, we evaluated a variety of hole-shrink processes as candidates for a fine-hole-pattern formation technology, and as a result of this study, we succeeded in applying an original hole-shrink technology to the formation of 40nm hole patterns and beyond.

Citation Download Citation

Tetsu Kawasaki, Satoru Shimura, Fumiko Iwao, Eiichi Nishimura, Masato Kushibiki, Kazuhide Hasebe, Michael Carcasi, Mark Somervell, Steven Scheer, and Hidetami Yaegashi "Fabrication of 32-nm contact/via hole by photolithographic-friendly method", Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 692333 (26 March 2008); https://doi.org/10.1117/12.771907

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available