26 March 2008 Evaluation of adamantane derivatives for chemically amplified resist: a comparison between ArF, EUV, and EB exposures
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Proceedings Volume 6923, Advances in Resist Materials and Processing Technology XXV; 692334 (2008); doi: 10.1117/12.772408
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States
Abstract
Photoresists containing adamantane derivatives have been widely used with ArF exposure tools. However, the performance characteristics of adamantane derivatives with other optical sources, such as extreme ultraviolet (EUV) and electron beam (EB) sources, have not been well-studied. To clarify such performance characteristics for several exposure sources, we synthesized acrylic terpolymers containing adamantyl methacrylates as model photopolymers and exposed the resist samples based on these polymers to ArF, EUV and EB radiations. On the basis of the lithographic performance characteristics of these resist samples, we evaluated the performance characteristics of adamantane derivatives upon exposure to different radiations. We discuss the relationship between the chemical structures of adamantane derivatives and lithographic performance characteristics.
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Kikuo Furukawa, Shu Seki, Takahiro Kozawa, Seiichi Tagawa, "Evaluation of adamantane derivatives for chemically amplified resist: a comparison between ArF, EUV, and EB exposures", Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 692334 (26 March 2008); doi: 10.1117/12.772408; https://doi.org/10.1117/12.772408
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KEYWORDS
Extreme ultraviolet lithography

Polymers

Lithography

Extreme ultraviolet

Line edge roughness

Photoresist materials

Scanning electron microscopy

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