15 April 2008 Line width roughness (LWR) performance of novel surface conditioner solutions for immersion lithography
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As line width roughness (LWR) and depth of focus (DoF) become the critical lithography challenges, there is a growing interest in applying surface conditioner solutions during post-develops process to increase DoF and reduce LWR. Previous work1 has demonstrated that a significant LWR reduction and DoF increase can be achieved through the utilization of a surface conditioner in the features of lines/spaces patterned for 45nm node by immersion lithography. However, the previous generation surface conditioner is not able to provide effective LWR improvement for the resist pattern having LWR less than 5nm. In this paper, 45nm lines/spaces features, having 4.8nm LWR, were patterned using immersion lithography to evaluate a newly-formulated surface conditioner's performance on LWR reduction. The results showed there is about 20% LWR reduction and the LWR was reduced to 4nm, which indicates the newly-formulated surface conditioner is capable of doing further LWR reduction on the pattern whose LWR is less than 5nm. In addition, surface conditioners were applied to extend the capability of 193nm "dry" lithography process window below the k2 = 0.3 threshold by DoF increase. The result demonstrated there is a significant process improvement on DoF which results in a usable DoF process window in practice comparable to that of "wet" lithography process.
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Bo Jou Lu, Bo Jou Lu, E. T. Liu, E. T. Liu, Anson Zeng, Anson Zeng, Aroma Tseng, Aroma Tseng, Steven Wu, Steven Wu, Bill Lin, Bill Lin, Chun Chi Yu, Chun Chi Yu, Ling-Jen Meng, Ling-Jen Meng, Manuel Jaramillo, Manuel Jaramillo, Ming-Ching Liao, Ming-Ching Liao, "Line width roughness (LWR) performance of novel surface conditioner solutions for immersion lithography", Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69233G (15 April 2008); doi: 10.1117/12.772494; https://doi.org/10.1117/12.772494

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