Post develop stain defect reduction

Masahiko Harumoto; Takuya Kuroda; Minoru Sugiyama; Akihiro Hisai

doi:10.1117/12.772367

26 March 2008 Post develop stain defect reduction

Masahiko Harumoto, Takuya Kuroda, Minoru Sugiyama, Akihiro Hisai

Proceedings Volume 6923, Advances in Resist Materials and Processing Technology XXV; 69233J (2008) https://doi.org/10.1117/12.772367
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

This study reports on stain defect reduction on KrF, ArF and Immersion resist system. Stain defects that appear after develop are a common problem with i-line, KrF, ArF and ArF-immersion resists. Last year we reported a reduction of this type of defect by optimizing the developer process. However, that optimized process used a long rinse time, and this negatively impacts throughput. In this work, we designed a novel develop process that reduced stain defects on the resist. Previous work showed that stain defect formation was mainly governed by the develop process conditions. Hence, in this work we focused on develop system improvements. On this system we identified the process both significantly reduced stain defect count and used a shorter develop process time. In addition to reducing defect count, we identified the mechanism of reduction of the stain defect. This was done by analyzing the composition of the defect.

Citation Download Citation

Masahiko Harumoto, Takuya Kuroda, Minoru Sugiyama, and Akihiro Hisai "Post develop stain defect reduction", Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69233J (26 March 2008); https://doi.org/10.1117/12.772367

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