26 March 2008 Post develop stain defect reduction
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This study reports on stain defect reduction on KrF, ArF and Immersion resist system. Stain defects that appear after develop are a common problem with i-line, KrF, ArF and ArF-immersion resists. Last year we reported a reduction of this type of defect by optimizing the developer process. However, that optimized process used a long rinse time, and this negatively impacts throughput. In this work, we designed a novel develop process that reduced stain defects on the resist. Previous work showed that stain defect formation was mainly governed by the develop process conditions. Hence, in this work we focused on develop system improvements. On this system we identified the process both significantly reduced stain defect count and used a shorter develop process time. In addition to reducing defect count, we identified the mechanism of reduction of the stain defect. This was done by analyzing the composition of the defect.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masahiko Harumoto, Masahiko Harumoto, Takuya Kuroda, Takuya Kuroda, Minoru Sugiyama, Minoru Sugiyama, Akihiro Hisai, Akihiro Hisai, } "Post develop stain defect reduction", Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69233J (26 March 2008); doi: 10.1117/12.772367; https://doi.org/10.1117/12.772367

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