4 April 2008 EUV resist based on low molecular weight PHS
Author Affiliations +
Proceedings Volume 6923, Advances in Resist Materials and Processing Technology XXV; 692344 (2008); doi: 10.1117/12.771774
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States
Abstract
Two types of EUV resists based on poly(4-hyrdoxystyrene) (PHS) were designed, i.e., PHS-bound sensitizer (PHS-FISS) and PHS/sensitizer blend (PHS/FITS). Imino sulfonate compounds were used as a photosensitizer. A PHS-bound sensitizer resist was prepared by the conventional radical copolymerization of 4-(tertbutyldimethylsilyl)oxystyrene (MSOST) and 9-fluorenilideneimino p-styrenesulfonate (FISS) and subsequent de-silylation of the copolymer. PHS with low molecular weight distribution was obtained by the anionic polymerization of MSOST and followed by de-silylation of the polymer. It was found that both types of resist were negative type and highly sensitive ( 10-20 mJ/cm2 ) on exposure at 254 nm and 13.5 nm. In the case of blended resist, the sensitivity was dependent on the amounts of sensitizer added and molecular weight of PHS. Outgassing from the present resists on EUV exposure was lower than that observed for MET-2D resist.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masamitsu Shirai, Akitaka Kurosima, Haruyuki Okamura, Koji Kaneyama, Toshiro Itani, "EUV resist based on low molecular weight PHS", Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 692344 (4 April 2008); doi: 10.1117/12.771774; https://doi.org/10.1117/12.771774
PROCEEDINGS
7 PAGES


SHARE
KEYWORDS
Extreme ultraviolet

Extreme ultraviolet lithography

Polymers

Line width roughness

Polymerization

Line edge roughness

Bioalcohols

Back to Top