12 March 2008 PDL oxide enabled pitch doubling
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A double patterning (DP) process is introduced with application for advanced technology nodes. This DP technique is enabled by a novel low-temperature pulsed deposition layer (PDLTM) oxide film which is deposited directly on patterned photoresist. In this article, we will report the results of fabrication of sub-50nm features on a 100nm pitch by the PDL-spacer DP process using 0.85 NA dry ArF lithography. This result represents the potential of the PDL-based DP to significantly enhance the resolution of the patterning process beyond the limits of optical lithography. Components of CD variance for this spacer DP scheme will be discussed.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nader Shamma, Nader Shamma, Wen-Ben Chou, Wen-Ben Chou, Ilia Kalinovski, Ilia Kalinovski, Don Schlosser, Don Schlosser, Tom Mountsier, Tom Mountsier, Collin Mui, Collin Mui, Raihan Tarafdar, Raihan Tarafdar, Bart van Schravendijk, Bart van Schravendijk, } "PDL oxide enabled pitch doubling", Proc. SPIE 6924, Optical Microlithography XXI, 69240D (12 March 2008); doi: 10.1117/12.771514; https://doi.org/10.1117/12.771514

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