Paper
7 March 2008 Mask optimization for arbitrary patterns with 2D-TCC resolution enhancement technique
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Abstract
In this paper, a new resolution enhancement technique named 2D-TCC technique is proposed. This method can enhance resolution of line patterns as well as that of contact hole patterns by the use of an approximate aerial image. The aerial image, which is obtained by 2D-TCC calculation, expresses the degree of coherence at the image plane of a projection optic considering mask transmission at the object plane. OPC of desired patterns and placement of assist patterns can be simultaneously performed according to an approximate aerial image called a 2D-TCC map. Fast calculation due to truncation of a series in calculating an aerial image is another advantage. Results of mask optimization for various line patterns and the validity of the 2D-TCC technique by simulations and experiments are reported.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Miyoko Kawashima, Kenji Yamazoe, Yoshiyuki Sekine, Manabu Hakko, Masakatsu Ohta, and Tokuyuki Honda "Mask optimization for arbitrary patterns with 2D-TCC resolution enhancement technique", Proc. SPIE 6924, Optical Microlithography XXI, 69240F (7 March 2008); https://doi.org/10.1117/12.771943
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Cited by 1 scholarly publication and 88 patents.
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KEYWORDS
Optical proximity correction

Resolution enhancement technologies

Source mask optimization

Critical dimension metrology

Fourier transforms

Photomasks

Cadmium

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