Paper
7 March 2008 Integration of pixelated phase masks for full-chip random logic layers
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Abstract
This work describes the advantages, tolerances and integration issues of using Pixelated Phase Masks for patterning logic interconnect layers. Pixelated Phase Masks (PPMs) can act as variable high-transmission attenuated phase shift masks where the pixelated phase configuration simultaneously optimizes OPC and SRAF generation. Thick mask effects help enable PPMs by allowing larger minimum pixel sizes and phase designs with near equal sized zero and piphase regions. PPMs with a 3-tone pixel mask (un-etched glass, etched glass, chrome) offer more flexible patterning capability compared to 2-tone pixel mask (no chrome) style but at the detriment of a more complex mask making process. We describe the issues and opportunities associated with using PPMs for patterning a 65nm generation first level metal layer of a micro-processor.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard Schenker, Srinivas Bollepalli, Bin Hu, Kenny Toh, Vivek Singh, Karmen Yung, Wen-hao Cheng, and Yan Borodovsky "Integration of pixelated phase masks for full-chip random logic layers", Proc. SPIE 6924, Optical Microlithography XXI, 69240I (7 March 2008); https://doi.org/10.1117/12.771677
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CITATIONS
Cited by 8 scholarly publications and 1 patent.
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KEYWORDS
Photomasks

Optical lithography

Glasses

Semiconducting wafers

SRAF

Cadmium

Etching

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