Validation of inverse lithography technology (ILT) and its adaptive SRAF at advanced technology nodes

Linyong Pang; Grace Dai; Tom Cecil; Thuc Dam; Ying Cui; Peter Hu; Dongxue Chen; Ki-Ho Baik; Danping Peng

doi:10.1117/12.775084

12 March 2008 Validation of inverse lithography technology (ILT) and its adaptive SRAF at advanced technology nodes

Linyong Pang, Grace Dai, Tom Cecil, Thuc Dam, Ying Cui, Peter Hu, Dongxue Chen, Ki-Ho Baik, Danping Peng

Proceedings Volume 6924, Optical Microlithography XXI; 69240T (2008) https://doi.org/10.1117/12.775084
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

In this paper, an overview of Inverse Lithography Technology (ILT) based on Level Set Methods (LSM) is provided. Applications of ILT in the advanced lithography process are then shown for several different devices, including DRAM, SRAM, FLASH, random logic, and imaging devices. ILT is used to correct the main patterns, as well as automatically insert SRAFs using model-based mathematical methods. The process of SRAF generation in ILT is unified with the process of inversion. With the help of ILT, SRAFs can be inserted where physically needed, independent of source parameters or target patterns. Results that demonstrate the adaptive nature of ILT SRAF insertion capability are presented. Wafer verification results were collected by multiple advanced semiconductor manufacturing companies at advanced technology nodes, including 45nm and 32nm nodes, and compared with their current OPC solution. Final wafer results presented here demonstrate that ILT improves pattern fidelity, enlarges process window, and provides remarkable control for line-end shortening.

Citation Download Citation

Linyong Pang, Grace Dai, Tom Cecil, Thuc Dam, Ying Cui, Peter Hu, Dongxue Chen, Ki-Ho Baik, and Danping Peng "Validation of inverse lithography technology (ILT) and its adaptive SRAF at advanced technology nodes", Proc. SPIE 6924, Optical Microlithography XXI, 69240T (12 March 2008); https://doi.org/10.1117/12.775084

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available