7 March 2008 High-n immersion lithography
Author Affiliations +
Abstract
A two-year study on the feasibility of High-n Immersion Lithography shows very promising results. This paper reports the findings of the study. The evaluation shows the tremendous progress made in the development of second-generation immersion fluid technology. Candidate fluids from several suppliers have been evaluated. All the commercial fluids evaluated are viable, so there are a number of options. Life tests have been conducted on bench top fluid-handling systems and the results referenced to full-scale systems. Parameters such as Dose per Laser Pulse, Pulse Rate, Fluid Flow Rate, and Fluid Absorbency at 193nm, and Oxygen/Air Contamination Levels were explored. A detailed evaluation of phenomena such as Last Lens Element (LLE) contamination has been conducted. Lens cleaning has been evaluated. A comparison of High-n fluid-based technology and water-based immersion technology shows interesting advantages of High-n fluid in the areas of Defect and Resist Interaction. Droplet Drying tests, Resist Staining evaluations, and Resist Contrast impact studies have all been run. Defect-generating mechanisms have been identified and are being eliminated. The lower evaporation rate of the High-n fluids compared with water shows the advantages of High-n Immersion. The core issue for the technology, the availability of High-n optical material for use as the final lens element, is updated. Samples of LuAG material have been received from development partners and have been evaluated. The latest status of optical materials and the technology timelines are reported. The potential impact of the availability of the technology is discussed. Synergy with technologies such as Double Patterning is discussed. The prospects for <22nm (hp) are evaluated.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Harry Sewell, Harry Sewell, Jan Mulkens, Jan Mulkens, Paul Graeupner, Paul Graeupner, Diane McCafferty, Diane McCafferty, Louis Markoya, Louis Markoya, Sjoerd Donders, Sjoerd Donders, Rogier Cortie, Rogier Cortie, Ralph Meijers, Ralph Meijers, Fabrizio Evangelista, Fabrizio Evangelista, Nandarisi Samarakone, Nandarisi Samarakone, } "High-n immersion lithography", Proc. SPIE 6924, Optical Microlithography XXI, 692415 (7 March 2008); doi: 10.1117/12.773071; https://doi.org/10.1117/12.773071
PROCEEDINGS
12 PAGES


SHARE
Back to Top