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7 March 2008 Precise CD control techniques for double patterning and sidewall transfer
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Abstract
We have successfully developed a self-limiting chemical dry etch process, associated equipment, and process flow featuring no use of plasma and no mask bending. In this process and process flow, the system performs mask trimming for critical dimension (CD) adjustments after hard-mask formation. First, the CD as defined in lithography is directly transferred by reactive ion etching (RIE) to silicon oxide film that is to become the hard mask. Next, reactive gas is deposited on the surface of the silicon oxide film at low temperatures and the reaction product is evaporated at high temperatures. With this process flow, there is no need to trim a mask made of organic materials. As a result, there is no mask bending and the amount of hard-mask trimming can be set by the amount of gas flow and pressure in the chemical dry etch process enabling detailed CD control to be performed. The proposed technology means that even higher aspect ratios in masks and finer CD control can be achieved for processes such as double patterning (DP) and sidewall transfer (SWT).
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Eiichi Nishimura, Masato Kushibiki, and Koichi Yatsuda "Precise CD control techniques for double patterning and sidewall transfer", Proc. SPIE 6924, Optical Microlithography XXI, 692425 (7 March 2008); https://doi.org/10.1117/12.772630
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