7 March 2008 Double patterning overlay and CD budget for 32 nm technology node
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Abstract
Double patterning is the best technique which allows 193nm immersion lithography to anticipate the 32 nm node, before EUV lithography. The final device pattern is formed by two independent patterning steps where the dense pitch is doubled. This allows printing each patterning step with higher k1 imaging factor. In this paper we present the overlay and CD budget applied to a double patterning (DP) technique for the definition of a 32nm technology node device, using an immersion scanner tool. A balance among different factors which affects the final CD of the device is necessary to optimize the imaging and the alignment performances of the exposure tool. A preliminary activity is also necessary to choose the most suitable mask splitting strategy. Adopting a single mask, which is exposed twice with the appropriate shift - the final pitch - , makes the overlay between the two exposures less critical than splitting the complementary layouts on two different masks. Finally, the CD uniformity of the pooled distributions from the two exposures is evaluated in order to define the requested tool performances in terms of overlay, CD control and metrology.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Umberto Iessi, Umberto Iessi, Sara Loi, Sara Loi, Antonio Salerno, Antonio Salerno, Pierluigi Rigolli, Pierluigi Rigolli, Elio De Chiara, Elio De Chiara, Catia Turco, Catia Turco, Roberto Colombo, Roberto Colombo, Marco Polli, Marco Polli, Antonio Mani, Antonio Mani, } "Double patterning overlay and CD budget for 32 nm technology node", Proc. SPIE 6924, Optical Microlithography XXI, 692428 (7 March 2008); doi: 10.1117/12.772795; https://doi.org/10.1117/12.772795
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