1 April 2008 30nm half-pitch metal patterning using Moti CD shrink technique and double patterning
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Double patterning lithography appears a likely candidate to bridge the gap between water-based immersion lithography and EUV. A double patterning process is discussed for 30nm half-pitch interconnect structures, using 1.2 NA immersion lithography combined with the MotifTM CD shrink technique. An adjusted OPC calculation is required to model the proximity effects of the Motif shrink technique and subsequent metal hard mask (MHM) etch, on top of the lithography based proximity effects. The litho-etch-litho-etch approach is selected to pattern a TiN metal hard mask. This mask is then used to etch the low-k dielectric. The various process steps and challenges encountered are discussed, with the feasibility of this approach demonstrated by successfully transferring a 30nm half-pitch pattern into the MHM.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Janko Versluijs, Janko Versluijs, J.-F. De Marneffe, J.-F. De Marneffe, Danny Goossens, Danny Goossens, Maaike Op de Beeck, Maaike Op de Beeck, Tom Vandeweyer, Tom Vandeweyer, Vincent Wiaux, Vincent Wiaux, Herbert Struyf, Herbert Struyf, Mireille Maenhoudt, Mireille Maenhoudt, Mohand Brouri, Mohand Brouri, Johan Vertommen, Johan Vertommen, Ji Soo Kim, Ji Soo Kim, Helen Zhu, Helen Zhu, Reza Sadjadi, Reza Sadjadi, "30nm half-pitch metal patterning using Moti CD shrink technique and double patterning", Proc. SPIE 6924, Optical Microlithography XXI, 69242C (1 April 2008); doi: 10.1117/12.774139; https://doi.org/10.1117/12.774139


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