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18 March 2008 Enabling 35nm double patterning contact imaging using a novel CD shrink process
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With 32nm and 22nm feature size node in the near future, Double patterning type processing will be in mainstream device manufacturing in most cutting edge Fabrication facilities. These type of processes requires cooperation between the litho cell and the other processing modules. In a collaboration between ASML and TEL we have developed a integrated solution to image 30nm Contacts. We describe a novel technique to achieve a geometric shrink from a starting geometry of 65nm down to the final feature size of 30nm for each of the two contact images Processing 2 images separately could produce two distinct populations for alignment and critical dimensions. We will show the ability to image 65nm contacts on a 130nm pitch with acceptable process windows and then apply the novel CD shrink process to shrink the 65nm contacts to 30nm final dimension. The second level of contacts is imaged in between the 1st set of contacts allowing us to image a 32nm ½ pitch contact pattern. We show the ability to Image 2 separate sets of contacts using a split clip layout with a single distribution for critical output parameters. We address the following process challenges: 1) Overlay capability across the slit and across the field. 2) Critical Dimension capability across the slit and across the Field. 3) Sidewall angle integrity with acceptable process window. Using the novel CD shrink process TEL has developed and imaging capability of the an ASML 1700i TWINSCAN, we can achieve a double pattern contact process with acceptable process capability.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshiaki Yamada, Michael M. Crouse, Shannon Dunn, Tetsu Kawasaki, Satoru Shimura, Eiichi Nishimura, Yoshitsugu Tanaka, Judy Galloway, Bill Pierson, and Robert Routh "Enabling 35nm double patterning contact imaging using a novel CD shrink process", Proc. SPIE 6924, Optical Microlithography XXI, 69242D (18 March 2008);


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