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1 April 2008 Continuing 193nm optical lithography for 32nm imaging and beyond
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Abstract
The practical extendibility of immersion lithography to the 32nm and 22nm nodes is being supported on immersion microsteppers installed at SEMATECH in Albany, New York. As the industry pushes the limits of water-based immersion technologies, research has continued into developing alternative materials to extend optical lithography for upcoming device generations. High index materials have been the primary focus of investigation, including optical lens materials such as lutetium aluminum garnet (LuAG with n=2.14) and barium lithium fluoride (BaLiF3 with n=1.64), high index fluids (Gen 2 and Gen 3 with n>=1.64), and resists. On a parallel and potentially complementary path, double patterning and double exposure technologies have been proposed. For high index materials research, the Amphibian XIS has demonstrated imaging at 1.50NA (32nm half-pitch) with high index fluids. A prism module is also available to enable imaging with potential BaLiF3 and LuAG prisms. The Exitech MS193i has demonstrated performance and imaging capability at 38nm hp with k1=0.256 at 1.30NA. Modifications at the mask plane now provide a double exposure capability, offering an imaging platform to investigate experimental classes of nonlinear materials and enabling double exposure imaging below k1eff=0.25. In this paper, we will discuss recent developments in these research areas supported by the toolset at SEMATECH.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Emil C. Piscani, Dominic Ashworth, Jeff Byers, Chris Van Peski, Paul Zimmerman, and Bryan J. Rice "Continuing 193nm optical lithography for 32nm imaging and beyond", Proc. SPIE 6924, Optical Microlithography XXI, 69242I (1 April 2008); https://doi.org/10.1117/12.775474
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