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1 April 2008 Random 65nm..45nm C/H printing using optimized illumination source and CD sizing by post processing
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Abstract
Printing random Contact Holes (C/H) is one of the most difficult tasks in current low-k1 lithography. Different approaches have been proposed and demonstrated successfully. One approach is the use of extensive Resolution Enhancement Technique such as sub-resolution assisting features, focus drilling and interference mapping lithography in combination with strong off-axis illumination. These techniques often lead to enhanced complexity at the OPC and mask making side. In order to keep the complexity low, soft illumination modes have been proposed like Soft-Annular (bull'seye) and Soft-Quasar type illumination [1]. It has been shown that the minimum k1 for the latter route is k1=0.41 using experimental results up to 0.93 NA. In this paper we demonstrate that the latter route can be extended to 45nm C/H at a minimum pitch of 120nm when using 1.35 NA. In order to achieve this we additionally applied a CD sizing technique to create the very small C/H.
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Jo Finders, Eddy Van der Heijden, Gert-Jan Janssen, Rik Vangheluwe, Tsuysohi Shibata, Ryouichirou Naitou, Hitoshi Kosugi, and Hisanori Sugimachi "Random 65nm..45nm C/H printing using optimized illumination source and CD sizing by post processing", Proc. SPIE 6924, Optical Microlithography XXI, 69242Y (1 April 2008); https://doi.org/10.1117/12.773595
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