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7 March 2008 Consideration of VT5 etch-based OPC modeling
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Including etch-based empirical data during OPC model calibration is a desired yet controversial decision for OPC modeling, especially for process with a large litho to etch biasing. While many OPC software tools are capable of providing this functionality nowadays; yet few were implemented in manufacturing due to various risks considerations such as compromises in resist and optical effects prediction, etch model accuracy or even runtime concern. Conventional method of applying rule-based alongside resist model is popular but requires a lot of lengthy code generation to provide a leaner OPC input. This work discusses risk factors and their considerations, together with introduction of techniques used within Mentor Calibre VT5 etch-based modeling at sub 90nm technology node. Various strategies are discussed with the aim of better handling of large etch bias offset without adding complexity into final OPC package. Finally, results were presented to assess the advantages and limitations of the final method chosen.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
ChinTeong Lim, Vlad Temchenko, Dieter Kaiser, Ingo Meusel, Sebastian Schmidt, Jens Schneider, and Martin Niehoff "Consideration of VT5 etch-based OPC modeling", Proc. SPIE 6924, Optical Microlithography XXI, 69243D (7 March 2008);

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