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12 March 2008 Optical proximity correction for elongated contact-hole printing
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Abstract
Optical proximity correction (OPC) of contact-hole printing is challenging since its two dimensional shapes requires through understanding of lithographic processes compared to one dimensional line and space pattering. Moreover, recently, it is common to use "elongated contact holes" with large contact area, rather than simple circular ones, for small electrical resistance. These elongated contact holes make it even more difficult to generate a good OPC model than the circular ones because the elongated contact-hole patterning causes the asymmetric process effects. For example, impacts of mask CD error, resist diffusion and resist development are different depending on the orientation of the elongated contact holes. This paper presents how the OPC model for the elongated contact-hole can be improved as the mask CD error compensation, accurate resist diffusion model and a new Variable Threshold Model (VTM) are applied for the asymmetric process effects.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Young-Chang Kim, Sangwook Kim, Sungsoo Suh, Yongjin Cheon, Sukjoo Lee, Junghyeon Lee, Seong-Woon Choi, Woosung Han, Sooryong Lee, and Kyoil Koo "Optical proximity correction for elongated contact-hole printing", Proc. SPIE 6924, Optical Microlithography XXI, 69243Q (12 March 2008); https://doi.org/10.1117/12.773819
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