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7 March 2008 Pellicle effect on OPC modeling
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Abstract
As the patterning of IC manufacturing shrinks to the 32-nm node and beyond, high-NA and immersion lithography are required for pushing resolution to its physical limit. To achieve good OPC performance, various physical effects such as polarization, mask topography, and mask pellicle have to be considered to improve the model accuracy. The attenuation and the phase variation of TE and TM wave components induced by the pellicle would impact optical qualities in terms of resolution, distortion, defocus shift, and high-order aberrations. In this paper, the OPC model considering pellicle effects is investigated with Jones pupil. The CD variation induced by the pellicle effect can be predicted accurately. Therefore, the improvement on model accuracy for 32-nm node is demonstrated.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Boren Luo, Chi-Kang Chang, W. L. Wang, W. C. Huang, Timothy Wu, C. W. Lai, R. G. Liu, H. T. Lin, K. S. Chen, and Y. C. Ku "Pellicle effect on OPC modeling", Proc. SPIE 6924, Optical Microlithography XXI, 69243T (7 March 2008); https://doi.org/10.1117/12.775419
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