Flare is unwanted light arriving at the wafer and light causing negative impact on pattern formation. It is caused
by scattered light from lens surfaces, problem on lens design, or problem on lens manufacture. The impact of flare varies
printed line widths or drops CD uniformity accuracy in full chip. And, It is an added incoherent background intensity that
will degrade OPC(Optical Proximity Correction) accuracy.
In this paper, we discussed CD variation, MEEF (Mask Error Enhancement Factor) and OPC accuracy by the
flare effects. Flare is bound up with local pattern density. Local pattern density influences background intensity by flare
or stray light. So we studied CD variation, MEEF, OPC modeling data with local pattern density by several experiment.
Also, in this study, we will discuss test pattern drawing for OPC modeling data, analyze CD difference between OPC test
pattern with considering flare effect and test pattern with regardless flare effect and MEEF value by flare effect. MEEF is
main factor that influences lithography process margin. This paper will show test pattern optimization in OPC modeling.