12 March 2008 Resist bias measured in Iso-focal structure
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Abstract
In modern photolithography as the feature sizes reduce, the simulation of manufacturing process calls on more and more accurate grasp of various effects in the process. While the optical simulation is calculated precisely by both firstprinciple simulators and optical proximity correction (OPC) model simulator, an accurate and computational inexpensive resist model has yet to be developed. After the exposure, resist parameters change the resist part of the proximity effects by either moving the "optical image" or responding differently to varying image qualities. By inspecting the wafer data, one can only see the results after development, which is the mixture of optical and resist effects. To isolate the effect contributed by resist, it is necessary to separate the optical component and resist component. In this paper, a novel method is proposed to determine the resist bias from the iso-focal structure, the critical dimension (CD) of which was measured under different defocus conditions. The results extracted from experiments indicate that a constant CD bias can catch most of resist effect at the first order of approximation.
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Jianliang Li, Chunqing Wang, Aram Kazarian, Qiliang Yan, Lawrence S. Melvin, "Resist bias measured in Iso-focal structure", Proc. SPIE 6924, Optical Microlithography XXI, 692449 (12 March 2008); doi: 10.1117/12.772912; https://doi.org/10.1117/12.772912
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