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7 March 2008 Investigation of mechanism of pattern deformation on TiN substrate and O2 plasma effect without BARC
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The pattern deformation such as photoresist lifting after lithography due to not enough photoresist adhesion to substrate is become critical issue when aspect ratio is much higher than what photoresist adhesion can support. This aspect ratio is getting higher when our design rule of device requests smaller feature size in lithography process. The BARC (Bottom Antireflective Coating), which advanced lithography is using, is very good layer to improve adhesion of photoresist since they are same kind of chemical. However, BARC needs extra etching process before main etching which is step to remove substrate. Sometimes, this BARC etching step generated defects which makes yield loss. Especially, lithography step for metallization with aluminum likes without BARC process to be free from those defect. We think that adhesion of photoresist on metal substrate such as aluminum or TiN is very important to develop lithography process without BARC. The adhesion change between photoresist and metal substrate will be changed as function of how we apply pretreatments for metal substrate. The typical pretreatments before patterning are dry ash, wet cleaning and HMDS treatment. In this paper, we study that adhesion changes as function of pretreatments and their mechanism. To understand the interaction between photoresist and substrate, we analyze surface change of wafers which prepared with several different experimental conditions using XPS (X-ray photoelectron spectroscopy) and Dynamic Contact Angle Analyzer. The results will explain how photoresist adhesion may be changed with different pretreatment conditions and how we can optimize process condition to improve photoresist adhesion without BARC.
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Juhyoung Moon, Young-Je Yun, Taek-seung Yang, Kwangseon Choi, Jeahee Kim, and Jaewon Han "Investigation of mechanism of pattern deformation on TiN substrate and O2 plasma effect without BARC", Proc. SPIE 6924, Optical Microlithography XXI, 69244G (7 March 2008);

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