4 March 2008 Design based binning for litho qualification and process window qualification
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Abstract
It is well known that as design rule shrink advanced techniques are required in-order to precisely and controllably print the design intent on a wafer. The commonly used techniques to overcome the resolution limit are OPC and RET. The goal of these techniques is to compensate for an expected local interaction between the light, mask pattern and photoresist, which will otherwise result in a mismatch between the printed pattern and design intent and lead to fatal yield failures. It is this interaction which dominates the extensive time-consuming mask qualification fabs are required to perform before a new mask on a new product can be inserted into a production line. In this paper, a new approach and Litho Qualification Monitor (LQM) system, implemented in Qimonda Dresden fab, for ultra fast pattern failure classification based on design information (Design Based Binning), coupled with an automatic interface to SEM metrology tool will be presented. The system centralizes all the operations required for the identification and analysis of marginally-printed systematic structures.
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Andreas Fischer, Uwe Seifert, Arno Wehner, Laurent Karsenti, Mark Geshel, Amiad Conley, Dieter Gscheidlen, Avishai Bartov, "Design based binning for litho qualification and process window qualification", Proc. SPIE 6925, Design for Manufacturability through Design-Process Integration II, 69251S (4 March 2008); doi: 10.1117/12.775713; https://doi.org/10.1117/12.775713
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