3 April 2008 Simulation of surface effects in energy dissipation of ultra-high-frequency (UHF) nanocantilevers
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Abstract
Devices composed of nanoelectromechanical systems (NEMS) possess distinguished properties which make them quite suitable for a variety of applications including ultra-high-frequency (UHF) resonators. However, most GHz resonators have low quality factor even though it has been well above 103 ~ 105 for very-high-frequency (VHF) microresonators. The motivation for our investigation of single crystal silicon nanoresonator arises from both its technological importance and its extraordinary surface effects. Our simulation results show that the quality factor decreased in a nearly linear manner as the surface area to volume ratio (SVR) was increased, which suggests that surface losses play a significant role in determining the quality factor of nanoresonators.
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Kun Yan, Ai-Kah Soh, "Simulation of surface effects in energy dissipation of ultra-high-frequency (UHF) nanocantilevers", Proc. SPIE 6926, Modeling, Signal Processing, and Control for Smart Structures 2008, 69260X (3 April 2008); doi: 10.1117/12.775386; https://doi.org/10.1117/12.775386
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