Paper
28 December 2007 Silicon wafers for scanning helium microscopy
D. Litwin, J. Galas, S. Sitarek
Author Affiliations +
Proceedings Volume 6937, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2007; 693740 (2007) https://doi.org/10.1117/12.784913
Event: Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2007, 2007, Wilga, Poland
Abstract
The Scanning Helium Microscopy is a new technique currently under development. The paper is an overview of measurements of the geometrical characteristics of Silicon wafer concentrating on accuracy and closely related matters. In the microscope the helium atom beam is used as a probe. The overall microscope resolution depends on a deflecting element, which shapes the beam and focuses it onto a sample's surface. The most promising focusing component appears to be an ultra thin silicon wafer that is deformed under a precise electric field. Flatness and thickness uniformity of the wafer must be measured in order to select the best plate to be used in the microscope. A scanning measurement system consists of two coaxially positioned confocal heads. The paper discusses measures taken to overcome the system sensitivity to temperature variation and concludes with utilizing symmetry descriptors for final selection of wafers.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Litwin, J. Galas, and S. Sitarek "Silicon wafers for scanning helium microscopy", Proc. SPIE 6937, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2007, 693740 (28 December 2007); https://doi.org/10.1117/12.784913
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KEYWORDS
Semiconducting wafers

Head

Helium

Silicon

Microscopes

Confocal microscopy

Electrodes

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