2 May 2008 Recent advances in LWIR Type-II InAs/GaSb superlattice photodetectors and focal plane arrays at the Center for Quantum Devices
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Abstract
In recent years, Type-II InAs/GaSb superlattice photo-detectors have experienced significant improvements in material quality, structural designs, and imaging applications. They now appear to be a possible alternative to the state-of-the-art HgCdTe (MCT) technology in the long and very long wavelength infrared regimes. At the Center for Quantum Devices, we have successfully realized very high quantum efficiency, very high dynamic differential resistance R0A product LWIR Type-II InAs/GaSb superlattice photodiodes with efficient surface passivation techniques. The demonstration of high quality LWIR Focal Plane Arrays that were 100% fabricated in-house reaffirms the pioneer position of this university-based laboratory.
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Manijeh Razeghi, Manijeh Razeghi, Darin Hoffman, Darin Hoffman, Binh-Minh Nguyen, Binh-Minh Nguyen, Pierre-Yves Delaunay, Pierre-Yves Delaunay, Edward Kwei-wei Huang, Edward Kwei-wei Huang, Meimei Z. Tidrow, Meimei Z. Tidrow, "Recent advances in LWIR Type-II InAs/GaSb superlattice photodetectors and focal plane arrays at the Center for Quantum Devices", Proc. SPIE 6940, Infrared Technology and Applications XXXIV, 694009 (2 May 2008); doi: 10.1117/12.782854; https://doi.org/10.1117/12.782854
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