nBn based infrared detectors using type-II InAs/(In,Ga)Sb superlattices

E. Plis; H. S. Kim; J. B. Rodriguez; G. D. Bishop; Y. D. Sharma; A. Khoshakhlagh; L. R. Dawson; J. Bundas; R. Cook; D. Burrows; R. Dennis; K. Patnaude; A. Reisinger; M. Sundaram; S. Krishna

doi:10.1117/12.780375

2 May 2008 nBn based infrared detectors using type-II InAs/(In,Ga)Sb superlattices

E. Plis, H. S. Kim, J. B. Rodriguez, G. D. Bishop, Y. D. Sharma, A. Khoshakhlagh, L. R. Dawson, J. Bundas, R. Cook, D. Burrows, R. Dennis, K. Patnaude, A. Reisinger, M. Sundaram, S. Krishna

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Proceedings Volume 6940, Infrared Technology and Applications XXXIV; 69400E (2008) https://doi.org/10.1117/12.780375
Event: SPIE Defense and Security Symposium, 2008, Orlando, Florida, United States

Abstract

The development of type-II InAs/(In,Ga)Sb superlattice (SL) detectors with nBn design for single-color and dual-color operation in MWIR and LWIR spectral regions are discussed. First, a 320 x 256 focal plane array (FPA) with cutoff wavelength of 4.2 μm at 77K with average value of dark current density equal to 1 x 10^-7 A/cm² at V_b=0.7V (77 K) is reported. FPA reveals NEDT values of 23.8 mK for 16.3 ms integration time and f/4 optics. At 77K, the peak responsivity and detectivity of FPA are estimated, respectively, to be 1.5 A/W and 6.4 x 10¹¹ Jones, at 4 μm. Next, implementation of the nBn concept on design of SL LWIR detectors is presented. The fabrication of single element nBn based long wave infrared (LWIR ) with λ_c ~ 8.0 μm at V_b = +0.9 V and T = 100K detectors are reported. The bias dependent polarity can be exploited to obtain two color response (λ_c1 ~ 3.5 μm and λ_c2 ~ 8.0 μm) under different polarity of applied bias. The design and fabrication of this two color detector is presented. The dual band response (λ_c1 ~ 4.5 μm and λ_c2 ~ 8 μm) is achieved by changing the polarity of applied bias. The spectral response cutoff wavelength shifts from MWIR to LWIR when the applied bias voltage varies within a very small bias range (~100 mV).

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E. Plis, H. S. Kim, J. B. Rodriguez, G. D. Bishop, Y. D. Sharma, A. Khoshakhlagh, L. R. Dawson, J. Bundas, R. Cook, D. Burrows, R. Dennis, K. Patnaude, A. Reisinger, M. Sundaram, and S. Krishna "nBn based infrared detectors using type-II InAs/(In,Ga)Sb superlattices", Proc. SPIE 6940, Infrared Technology and Applications XXXIV, 69400E (2 May 2008); https://doi.org/10.1117/12.780375

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