HgCdTe FPAs made by arsenic-ion implantation

L. Mollard; G. Destefanis; J. Rothman; N. Baier; S. Bisotto; P. Ballet; J. P. Chamonal; P. Castelein; J. P. Zanatta; M. Tchagaspanian; A. M. Papon; J. P. Barnes; F. Henry; S. Gout; G. Bourgeois; C. Pautet; P. Fougères

doi:10.1117/12.780582

15 May 2008 HgCdTe FPAs made by arsenic-ion implantation

L. Mollard, G. Destefanis, J. Rothman, N. Baier, S. Bisotto, P. Ballet, J. P. Chamonal, P. Castelein, J. P. Zanatta, M. Tchagaspanian, A. M. Papon, J. P. Barnes, F. Henry, S. Gout, G. Bourgeois, C. Pautet, P. Fougères

Author Affiliations +

Proceedings Volume 6940, Infrared Technology and Applications XXXIV; 69400F (2008) https://doi.org/10.1117/12.780582
Event: SPIE Defense and Security Symposium, 2008, Orlando, Florida, United States

Abstract

In this paper, we report the fabrication and electro-optical characterization of both long-wavelength (LWIR) and middle-wavelength (MWIR) p-on-n infrared photodiodes in HgCdTe. LWIR and MWIR HgCdTe epitaxial layers were grown by liquid phase and molecular beam epitaxy respectively. p-type doping was obtained by arsenic implantation and n-type doping by indium incorporation during growth. The arsenic concentration profile determined by Secondary Ion Mass Spectroscopy showed multi-component diffusion after Hg post-implant annealing. The process yields an arsenic activation efficiency of around 50%, estimated from MEMSA (Maximum Entropy Mobility Spectrum Analysis) measurements. The damage induced by arsenic implantation into HgCdTe have been examined by transmission electron microscopy (TEM) and suggest the formation of an array of dislocations loops after arsenic implantation. However, after annealing under Hg overpressure, the impact of implantation falls below the sensitivity of the TEM, suggesting that annealing effectively suppresses most of the defects. The p-on-n photodiodes showed low leakage currents (shunt resistance>100 MOhms) and typical RoA values comparable to the state of the art (RoA>4000 Ω.cm² for λc=9.2 μm at 77K). Finally, first results on p-on-n focal plane arrays realized at CEA-LETI will be presented.

Citation Download Citation

L. Mollard, G. Destefanis, J. Rothman, N. Baier, S. Bisotto, P. Ballet, J. P. Chamonal, P. Castelein, J. P. Zanatta, M. Tchagaspanian, A. M. Papon, J. P. Barnes, F. Henry, S. Gout, G. Bourgeois, C. Pautet, and P. Fougères "HgCdTe FPAs made by arsenic-ion implantation", Proc. SPIE 6940, Infrared Technology and Applications XXXIV, 69400F (15 May 2008); https://doi.org/10.1117/12.780582

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available