16 April 2008 Characterization of radio frequency sputtered SixGe1-xOy thin films for uncooled micro-bolometer
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Abstract
Thin film SixGe1-xOy were deposited on glass, silicon and SiO2 by RF magnetron sputtering using co-sputtering of silicon and germanium targets in an environment of oxygen and argon. Silicon percentage was varied from ~7% to 22%. Exact contents of each material were determined by XRD/EDS and electrical properties of amorphous compound were studied. High values of temperature coefficient of resistance were obtained in specific conditions. the highest achieved TCR at room temperature was (5.8%/K) using Si0.177Ge0.726O0.097 (film deposited at 400 °C). The measured resistivity on this sample was 14.6 Ω cm.
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Q. Cheng, M. Almasri, "Characterization of radio frequency sputtered SixGe1-xOy thin films for uncooled micro-bolometer", Proc. SPIE 6940, Infrared Technology and Applications XXXIV, 694011 (16 April 2008); doi: 10.1117/12.777909; https://doi.org/10.1117/12.777909
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